Northrop Grumman Develops New Gallium Arsenide E-Band High-Power Monolithic Microwave Integrated Circuits
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The APH667 and the APH668 are GaAs-based broadband, three-stage amplifier devices that operate from 81 – 86GHz and 71 – 76GHz respectively.
In 2004,
"Customers typically combine several MMIC products in this frequency band to achieve higher output power. The APH667 and APH668 will allow them to dramatically reduce the number of components required to reach those goals, simplifying the product's architecture and enhancing the performance," he said.
Product descriptions:
APH667:
- The APH667 is a 0.1 mm GaAs HEMT MMIC power amplifier MMIC that operates between 81 and 86 GHz.
- This power amplifier provides 17 dB of linear gain, +25.5 dBm (0.35 W) of saturated output power (typical).
APH668:
- The APH668 is a 0.1 mm GaAs HEMT MMIC power amplifier chip that is operates between 71 and 76 GHz.
- This power amplifier provides 19 dB of linear gain, +28 dBm (0.63 W) of saturated output power (typical).
Pre-production quantities of the APH667 and APH668 will be available in the third quarter of 2013 with production quantities available in fourth quarter of 2013.
More information and advance data sheets on the E-Band product line are available online at www.as.northropgrumman.com\mps. Limited engineering prototype samples are available from stock to qualified customers by contacting Microelectronic Products and Services at as-mps.sales@ngc.com.
SOURCE
Bob Bishop, 310-812-5227 (office), 310-251-0261 (mobile), bob.j.bishop@ngc.com