Northrop Grumman Begins Sampling New Compact Indium Phosphide Ultra-Low-Noise Amplifiers for Commercial, Military Use
The cost-effective indium phosphide (InP) high electron mobility transistor (HEMT) LNAs are for use in E-band and W-band commercial, civil and military applications such as communication links, sensors, millimeter-wave imaging, radars and digital microwave radios.
The compact die design of each LNA considerably reduces footprint size and exhibits unmatched ultra-low-noise performance and high gain.
"The LNAs are the initial release of products designed with the company's indium phosphide process, a powerful semiconductor technology that has successfully been used in
Product descriptions:
ALP283:
- The ALP283 is a W-band 1.7 mm2 InP HEMT low-noise amplifier that operates between 80 and 100 GHz
- The power amplifier provides 29 dB of linear gain, 2.5 dB typical Noise Figure and 1dB gain compression power (P1dB) of 3 dBm (2 mw)
- A 2 dB typical average noise figure from 80-100 GHz
- Excellent for W-Band millimeter-wave imaging applications, sensors and communication links
ALP275:
- The ALP275 is W-band 2.125 mm2 InP HEMT ultra-low-noise amplifier that operates between 71 and 96 GHz
- The power amplifier provides greater than 26 dB of linear gain, 3 dB typical Noise Figure and P1dB of 4 dBm (2.5 mw)
- Ideal for E-Band and W-Band communications links
To ensure rugged and reliable operation, both LNAs are fully passivated. Both bond pad and backside metallization are Ti/Au, which is compatible with conventional die attach, thermocompression and thermosonic wire bonding assembly techniques.
Detailed datasheets on both LNAs can be found at www.northropgrumman.com/mps
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SOURCE
Amy Akmal, 424-254-6945, amy.akmal@ngc.com